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* High DC Current Gain -- hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc * Monolithic Construction * BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 * BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 . . . for use as output devices in complementary general-purpose amplifier applications.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power Silicon PNP Darlingtons
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATING
REV 7 Operating and Storage Junction Temperating Range Total Device Dissipation @ TC = 25 _C Derate above 25 _C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Thermal Resistance, Junction to Case Rating Characteristic Symbol TJ, Tstg VCEO VCB VEB PD IC IB 5.0 PD, POWER DISSIPATION (WATTS) 10 40 50 15 20 25 30 35 45 0 15 BD676 BD676A 30
Figure 1. Power Temperature Derating
45
45
45
Symbol
JC
BD678 BD678A
60
TC, CASE TEMPERATURE (C)
- 55 to + 150
60
60
40 0.32
75
0.1
4.0
5.0
BD680 BD680A
90
80
80
3.13
Max
105
BD682
100
100
120
135
_C/W
Watts W/_C
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
150
165
4.0 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLTS 40 WATTS
BD676 BD676A BD678 BD678A BD680 BD680A BD682
CASE 77-08 TO-225AA TYPE
Order this document by BD676/D
1
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BD676 BD676A BD678 BD678A BD680 BD680A BD682
(1) Pulse Test: Pulse Width DYNAMIC CHARACTERISTICS ON CHARACTERISTICS DC Current Gain(1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Small-Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Collector-Emitter Saturation Voltage(1) (IC = 1.5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) Base-Emitter On Voltage(1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO. IE = 0, TC = 100C)
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
Collector-Emitter Breakdown Voltage(1) (IC = 50 mAdc, IB = 0)
2
0.05 1.0 IC, COLLECTOR CURRENT (AMP) 5.0 1.0 2.0 0.1 0.2 0.5 TC = 25C 2.0 5.0 10 50 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
BONDING WIRE LIMIT THERMAL LIMIT at TC = 25C SECONDARY BREAKDOWN LIMIT
v 300 s, Duty Cycle v 2.0%.
BD676, 676A BD678, 678A BD680, 680A BD682
Characteristic
PNP BD676, 676A BD678, 678A BD680, 680A BD682
Figure 3. Darlington Circuit Schematic
BASE 100 BD678, 680, 682 BD676A, 678A, 680A BD676, 676A BD678, 678A BD680, 680A BD682 BD678, 680, 682 BD676A, 678A, 680A BD676, 678, 680, 682 BD676A, 678A, 680A
[ 8.0 k [ 120
There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
COLLECTOR
EMITTER
Motorola Bipolar Power Transistor Device Data
VCE(sat) VBE(on) Symbol BVCEO ICBO ICEO IEBO hFE hfe Min 45 60 80 100 750 750 1.0 -- -- -- -- -- -- -- -- Max 500 2.5 2.5 2.5 2.8 2.0 0.2 2.0 -- -- -- -- -- -- -- mAdc mAdc Adc Unit Vdc Vdc Vdc --
BD676 BD676A BD678 BD678A BD680 BD680A BD682
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77-08 TO-225AA TYPE ISSUE V
Motorola Bipolar Power Transistor Device Data
3
BD676 BD676A BD678 BD678A BD680 BD680A BD682
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4
Motorola Bipolar Power Transistor Device Data
*BD676/D*
BD676/D

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